AC |
Alternating Current |
ACPR |
Adjacent Channel Power Ratio |
ADP |
Ammonium dihydrogen phosphate |
ADS |
Advanced Design System |
AlGaAs |
Aluminum gallium arsenide |
AM |
Amplitude Modulation |
AM-DD |
Amplitude Modulation — Direct Detection |
ASE |
Amplified Spontaneous Emission |
BER |
Bit Error Rate |
BH |
Buried Heterostructure |
BiCMOS |
Bipolar Complementary Metal Oxide Semiconductor |
BILBAO |
Borne d’infrastructures large bande avec accès optique (Wideband infrastructure base with optical access) |
CAD |
Computer-aided design |
CdS |
Cadmium sulfide |
CEA-Leti |
Commissariat à l’énergie atomique (Atomic energy commission) |
CMOS |
Complementary metal-oxide-semiconductor |
CNAM |
Conservatoire national des arts et métiers |
CPW |
Coplanar waveguide |
DBR |
Distributed Bragg reflector |
DC |
Direct current |
DD-MZM |
Dual drive-MZM |
DFA |
Doped fiber amplifier |
DFB |
Distributed feedback laser |
DFT |
Discrete Fourier transform |
E/O |
Electric/optic |
EAM |
Electro-absorption modulator |
EDFA |
Erbium-doped fiber amplifier |
EEL |
Edge emitting laser |
EML |
Electro-absorption modulated laser |
EMT |
Electromagnetic transverse |
EOM |
Electro-optic modulator |
ER |
Extinction ratio |
ESYCOM |
Equipe systèmes de communications et microsystèmes (Communications and microsystems team) |
ET |
Electric transverse |
EVM |
Error vector magnitude |
FCC |
Federal communications commission |
FET |
Field-effect transistor |
FKE |
Franz-Keldysh effect |
FT R&D |
France Telecom Research & Development |
GaAs |
Galium arsenide |
GaP |
Galium phosphide |
Ge |
Germanium |
GRINSCH |
Graded index separate confinement heterostructure |
HB |
Harmonic balance |
HBT |
Heterojunction bipolar transistor |
HEMT |
High electron mobility transistor |
HFET |
Heterojunction field-effect transistor |
HFSS |
High frequency simulation system |
HPT |
Heterojunction bipolar phototransistor |
IDFT |
Inverse discrete Fourier transform |
IM-DD |
Intensity modulation-direct detection |
IMEP |
Institut de microélectronique, électromagnétisme et optique (Institute of microelectronics, electromagnetism and optics) |
InAs |
Indium arsenide |
InGaAs |
Indium gallium arsenide |
InGaP |
Indium gallium phosphide |
InP |
Indium phosphide |
IR-UWB |
Impulse Radio — Ultra Wideband |
KDP |
Potassium dihydrogen phosphate |
LAHC |
Laboratoire d’hyperfréquences et de caractérisation (hyperfrequency and characterization laboratory) |
LASER |
Light amplifier by stimulated emission of radiation |
LF |
Low frequency |
LiNbO3 |
Lithium niobate |
LiTaO3 |
Lithium tantalate |
MAG |
Maximum available gain |
MASER |
Microwave amplifier by stimulated emission of radiation |
MB-OFDM |
Multi-band — orthogonal frequency division modulation |
MB-OOK |
Multi-band on off keying |
MEMS |
Micro-electro-mechanical systems |
MESFET |
Metal semiconductor field-effect transistor |
MMIC |
Monolithic microwave integrated circuit |
MODFET |
Modulation-doped field-effect transistor |
MQW-EAM |
Multi-quantum well-EAM |
MSM |
Metal semiconductor metal |
MZM |
Modulator Mach-Zehnder |
Nd:YAG |
Neodymium-doped yttrium aluminum garnet |
NF |
Noise factor, Noise figure |
nOI |
n order intermodulation |
nOIP |
n order intercept point |
NRA |
National Research Agency |
O/E |
Optic/electric |
OEIC |
Optoelectronic integrated circuit |
OEMMIC |
Optoelectronic millimeter-wave monolithic integrated circuit |
OFDM |
Orthogonal frequency division modulation |
PDFA |
Praseodymium-doped fiber amplifier |
PDG |
Biased-dependent gain |
PM |
Phase modulation |
PMMA |
Poly(methyl methacrylate) |
PRBS |
Pseudo-random bit sequence |
PSK |
Phase-shift keying |
QAM |
Quadrature amplitude modulation |
QCSE |
Quantum confined stark effect |
QW-EAM |
Quantum well-EAM |
RCEPD |
Resonant cavity enhanced photodetectors |
RFT |
Rapid Fourier transform |
RIN |
Relative intensity noise |
RoF |
Radio over fiber |
SD-MZM |
Single drive -MZM |
Si |
Silicon |
SiGe |
Silicon-germanium |
SiMOX |
Separation by implantation of oxygen |
SiO2 |
Silicon dioxide |
SOA |
Semiconductor optical amplifier |
SOC |
System on a chip |
SOI |
Substrate on insulator |
TDFA |
Thulium-doped fiber amplifier |
TEGFET |
Two-dimensional electron gas field-effect transistor |
TW-MZM |
Travelling wave-MZM |
UTC |
Uni-travelling carrier |
UWB |
Ultra-wideband |
VCSEL |
Vertical-cavity surface-emitting laser |
VCSOA |
Vertical-cavity semiconductor optical amplifier |
VMDP |
Velocity matched distributed photodetector |
WDM |
Wavelength division multiplexing |
YDFA |
Ytterbium-doped fiber amplifier |
ZnS |
Zinc sulfide |