- Cover
- Half Title
- Title Page
- Copyright Page
- Table of Contents
- Foreword
- Preface
- Editors
- Contributors
- SECTION I Nano-CMOS Modeling
- Chapter 1 Validation of Nano-CMOS Predictive Technology Model Tool on NanoHUB.org
- Chapter 2 Comparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET Device
- Chapter 3 Impact of Random Interface Traps on Asymmetric Characteristic Fluctuation of 16-nm-Gate MOSFET Devices
- SECTION II Nano-CMOS Technology
- SECTION III Nano Capacitors
- Chapter 7 Package-Compatible High-Density Nano-Scale Capacitors with Conformal Nano-Dielectrics
- Chapter 8 Modified Carbon Nanostructures for Display and Energy Storage
- Chapter 9 Production and Characterization of Nanoparticle Dispersions of Organic Semiconductors for Potential Applications in Organic Electronics
- Chapter 10 Investigation of Charge Accumulation in Si3N4/SiO2 Dielectric Stacks for Electrostatically Actuated NEMS/MEMS Reliability
- SECTION IV Terahertz Systems and Devices
- SECTION V Single-Electron Transistors and Electron Tunneling Devices
- Chapter 13 Simultaneously Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced Electromigration
- Chapter 14 High-Resistive Tunnel Junctions for Room-Temperature-Operating Single- Electron Transistors Fabricated Using Chemical Oxidation of Tungsten Nanoparticles
- Chapter 15 Axon-Inspired Communication Systems
- Chapter 16 Electromechanical Modeling of GNP Nanocomposites for Integrated Stress Monitoring of Electronic Devices
- SECTION VI Quantum Cellular Automata
- Chapter 17 An HDL Model of Magnetic Quantum-Dot Cellular Automata Devices and Circuits
- Chapter 18 Restoring Divider Design for Quantum-Dot Cellular Automata
- Chapter 19 LINA-QCA: Theory, Design, and Viable Implementation Strategies
- Chapter 20 Minimal Majority Gate Mapping of Four-Variable Functions for Quantum-Dot Cellular Automata
- SECTION VII Memristors, Resistive Switches, and Memory
- Chapter 21 Nanodevices: Describing Function and Liénard Equation
- Chapter 22 Sensing and Writing Operations of Nano-Crossbar Memory Arrays
- Chapter 23 Modeling of Complementary Resistive Switches
- Chapter 24 Hybrid Design of a Memory Cell Using a Memristor and Ambipolar Transistors
- Chapter 25 Spike Timing-Dependent Plasticity Using Memristors and Nano-Crystalline Silicon TFT Memories
- Chapter 26 Thermally Actuated Nanoelectromechanical Memory: A New Memory Concept for Spacecraft Application
- SECTION VIII Graphene Preparation and Properties
- SECTION IX Graphene Devices
- SECTION X Carbon Nanotube Applications
- Chapter 33 Integrating Low-Temperature Carbon Nanotubes as Vertical Interconnects in Si Technology
- Chapter 34 Readout Circuit Design for MWCNT Infrared Sensors
- Chapter 35 Use of Vertically Aligned Carbon Nanotubes for Electrochemical Double- Layer Capacitors
- Chapter 36 Spray Deposition of Carbon Nanotube Thin Films
- Chapter 37 Electrical Control of Synthesis Conditions for Locally Grown CNTs on a Polysilicon Microstructure
- SECTION XI Carbon Nanotube Transistor Modeling
- SECTION XII Carbon Nanotube Transistor Fabrication
- SECTION XIII Random CNT Network Transistors
- SECTION XIV Nano-Redundant Systems
- SECTION XV Nanowire Fabrication
- Chapter 47 Growth and Characterization of GaAs Nanowires Grown on Si Substrates
- Chapter 48 Synthesis and Characterization of n- and p-Doped Tin Oxide Nanowires for Gas Sensing Applications
- Chapter 49 Cu Silicide Nanowires: Fabrication, Characterization, and Application to Li-Ion Batteries
- Chapter 50 High-Aspect-Ratio Metallic Nanowires by Pulsed Electrodeposition
- SECTION XVI Nanowire Applications
- SECTION XVII Nanowire Transistors
- Chapter 54 High-Speed and Transparent Nanocrystalline ZnO Thin Film Transistors
- Chapter 55 First-Principle Study of Energy-Band Control by Cross-Sectional Morphology in [110]-Si Nanowires
- Chapter 56 Interplay of Self-Heating and Short-Range Coulomb Interactions due to Traps in a 10 nm Channel Length Nanowire Transistor
- Chapter 57 Impact of Phonon Scattering in an Si GAA Nanowire FET with a Single Donor in the Channel
- Chapter 58 Modeling and Minimizing Variations of Gate-All-Around Multiple-Channel Nanowire TFTs
- Chapter 59 Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor: Extraction of Series Resistance and Capacitance–Voltage Behavior
- SECTION XVIII Nanomagnetic Logic
- Chapter 60 Nonvolatile Logic-in-Memory Architecture: An Integration between Nanomagnetic Logic and Magnetoresistive RAM
- Chapter 61 Implementation of a Nanomagnet Full Adder Circuit
- Chapter 62 Investigations on Nanomagnetic Logic by Experiment-Based Compact Modeling
- Chapter 63 Parallel Energy Minimizing Computation via Dipolar Coupled Single Domain Nanomagnets
- SECTION XIX Spintronics
- Chapter 64 On Physical Limits and Challenges of Graphene Nanoribbons as Interconnects for All-Spin Logic
- Chapter 65 Influence of Impurity and Dangling Bond Scattering on the Conductance Anomalies of Side-Gated Quantum Point Contacts
- Chapter 66 Electric Field-Controlled Spin Interactions in Quantum Dot Molecules
- Chapter 67 Material Issues for Efficient Spin-Transfer Torque RAMs
- SECTION XX Nanodevice Modeling
- Index
Nanoelectronic DEVICE Applications Handbook
Edited by
James E. Morris
Krzysztof Iniewski
-
No Comment
..................Content has been hidden....................
You can't read the all page of ebook, please click here login for view all page.