R
R6G, see Rhodamine-6G (R6G)
Radio frequency (RF), 119, 393
transistor device micrograph, 394
Radio frequency identification tags (RFIDs), 109
Radioisotope thermoelectric generators (RTGs), 355
Raman
enhancers, 678
spectroscopy, 427
Random CNT networks, 457
Random dopant fluctuations (RDF), 15, 27
simulation, 28
Random dopants (RDs), 29; see also Interface traps (ITs)
Random ITs on asymmetric characteristic fluctuation, 27, 35–36
of drain current–gate voltage, 31
drain-induced, barrier-lowering fluctuation, 28, 33
effective oxide thickness, 28
interface traps, 29
ITs and RDs comparison, 34
random dopants, 29
RDF simulation, 28
static noise margin fluctuation, 35
statistical 3D device simulation, 28–30
subthreshold swing fluctuation, 28, 33
surface potential and electron current density, 32
threshold voltage fluctuation, 33, 34, 35
threshold voltage spread characteristic magnitude, 31
transfer characteristic fluctuation estimation, 30
Random network transistor, 525; see also Solution-processed random CNT networks
back-gated, 526
I–V characteristics of, 527
performance comparison, 528–529
randomly generated 3D CNT network, 530
substrates, 526
transconductance, 528
Random Rashba field (RRF), 819
Random telegraph noise (RTN), 15
Random telegraph noise fluctuations (RTF), 15, 711
Random telegraph signal (RTS), 15
Raw defect map, 576
RC, see Reference resistor (RC); Resistor–capacitor (RC)
RDF, see Random dopant fluctuations (RDF)
RDs, see Random dopants (RDs)
RE, see Reference electrode (RE); Radio frequency (RF)
Reactive ion etching (RIE), 84, 728
reaxFF, 874
Reduced graphene oxide (RGO), 51
Reduced graphene oxide FETs (RGO FETs), 51; see also CMOS scaling
controlling carrier injection, 53
cyclic voltammogram, 54
electrical transport modification in, 52
fabricated device images, 53
injection current, 54
output characteristics of graphene device, 54
transfer characteristics, 54
Reference electrode (RE), 644
Reference resistor (RC), 301
Refractory period, 197
Relative humidity (RH), 110, 114
Renewable energy sources, 133
Research Resources Center (RRC), 628
Resistive switches, 315
bipolar resistive switch simulation, 317, 318
sneak-path problem, 315
Resistor–capacitor (RC), 44
Response generator (RG), 572
Restoring, 243
comparison, 253
controlled full subtractor, 248–149
elements for, 246
multiplexer, 248
timing analysis, 251
timing block diagram, 250
wire crossings comparison, 249
RFIDs, see Radio frequency identification tags (RFIDs)
RG, see Response generator (RG)
RGO, see Reduced graphene oxide (RGO)
RGO FETs, see Reduced graphene oxide FETs (RGO FETs)
RH, see Relative humidity (RH)
Rhodamine-6G (R6G), 674
SERS enhancement of, 676
RMS, see Root mean square (RMS)
Room temperature (RT), 400
Root mean square (RMS), 139
RRC, see Research Resources Center (RRC)
RRF, see Random Rashba field (RRF)
RT, see Room temperature (RT)
RTF, see Random telegraph noise fluctuations (RTF)
RTGs, see Radioisotope thermoelectric generators (RTGs)
RTN, see Random telegraph noise (RTN)
RTS, see Random telegraph signal (RTS)
R type IV converter, 438
Runge–Gross theorem, 495
S
SAMs, see Self-assembled monolayers (SAMs)
Sandwich compounds, 411
SAW, see Surface acoustic wave (SAW)
SC, see Sodium cholate (SC)
Scanning electron microscopy (SEM), 169
to characterize transferprinted antenna structures, 137
graphene and hydrogenated graphene characterization, 368
for morphology analysis, 657, 686
of vertically aligned wire, 767
Scanning probe microscope (SPM), 167
Scanning transmission electron microscope (STEM), 628
Scanning tunneling microscope (STM), 831
SCD, see Single-crystal diamond (SCD)
SCE, see Selective chemical etching (SCE); Standard calomel electrode (SCE)
SCEs, see Short-channel effects (SCEs)
Schottky
diodes, 134
emission, 123
Schrödinger equation, 486
SCLC, see Space–charge-limited conduction (SCLC)
S–D, see Source–drain (S–D)
SD, see Standard deviation (SD)
SDD, see Signal-drive distance (SDD)
Secondary ion mass spectrometry, 46–47
array leakage reduction, 312
Selective chemical etching (SCE), 539
Self-assembled monolayers (SAMs), 41, 42; see also CMOS scaling; Porphyrins
flat-band voltage values, 50, 52
formation, 43
SAM-modified interface, 53
UV–Vis reflection spectra, 49, 50, 51
Self-heating and short-range coulomb interaction interplay, see ON current degradation simulation results
Self-test for nanofabric systems, 570, 587–588
algorithm, 577
analysis and discussion, 584
AND/OR bridging faults, 579, 580
AND/OR implementation, 573
background and related works, 571–572
BIST approach, 571
customized configurations, 583–584
defect tolerance, 570
faulty block identification, 577–578
forward-biased diode faults, 580–584
half-adder implementation, 574
junction cross points, 583
logic mapping technique, 572–574
nanoblock, 570, 571, 584–585, 587, 588
nanofabric architecture, 571
number of configurations required, 584
optimization technique, 582
redundant configuration elimination, 583
reverse-biased diode and bridging faults, 580
simple logic implementation, 572
stuck-at-0 and stuck-open faults, 578
stuck-at-1 faults, 579
switchblock, 571
testing approach, 574
testing procedure, 576
testing time, 585–586, 587, 588, 589
SEM, see Scanning electron microscopy (SEM)
Semiconducting–semiconducting junction points (SS junction points), 529
Semiconductor Research Corporation (SRC), 406
Semiconductors, 616
memories, 751
role of temperature in, 485
silicon, 807
tubes, 548
zinc oxide, 665
Semiempirical models, 873
advantage, 874
limitation, 874
SERF, see Static Energy Recovery Full adder(SERF)
SERS, see Surface-enhanced Raman scattering (SERS)
SET, see Single-electron transistor (SET)
SFD, see Switching field distribution (SFD)
SFIL, see Step and flash imprint lithography (SFIL)
Short transistor, 558
Short-channel effects (SCEs), 43
suppressed, 728
Short-wavelength-based optoelectronic devices, 655
Side-gated QPC conductance anomalies, 827, 834; see also Quantum point contacts (QPCs)
dangling bond scattering effect, 832–833
impurity scattering effect, 829–832
numerical simulations, 828–829
results, 829
SiGe layer, 744; see also GAA Si-NWFET
Signal-drive distance (SDD), 808
Silicon trench capacitors, 84–85
Silicon-based CMOS technology, 3
Silicon-based semiconductor chips, 61
Silicon-on-insulator technology (SoI technology), 144
Silver nanowires self-assembly, 628
SIMD, see Single-instruction-multiple-data (SIMD)
Simulation program with integrated circuit emphasis (SPICE), 3, 529
Si nanowire, 868
Si nanowire field-effect transistors (SiNW FETs), 701; see also Energy-band control study; [110]-SiNWs
Single crystalline nanowires, 628
Single domain magnet, 798
phase graph and magnetic image of, 799
switching behavior of, 781
Single-crystal diamond (SCD), 399
Single-electron transistor (SET), 201, 267; see also Axon-inspired communication; High-resistive tunnel junctions
Coulomb blockade, 181, 186, 187, 189
double-junction, 182
I–V characteristics, 187
multijunction SET device, 184, 186
operation constraints on, 182
Orthodox theory, 188
as photondetector, 190
for room-temperature operations, 182
simulators for, 202
source drain voltage, 188
threshold voltage, 188
tungsten oxide, 187
Single-event upsets, 356
Single-instruction-multiple-data (SIMD), 793
Single-layer nanomagnets
bit representation in, 754
clocked, 754
dipolar magnetic coupling, 754
Single-type primitive (S type primitive), 270
Single-wall (SW), 536
Single-walled carbon nanotubes (SWNTs), 505; see also SWNTs terahertz response
chiral, 486
zigzag, 486
SiNW FETs, see Si nanowire field-effect transistors (SiNW FETs)
[110]-SiNWs, 701, 709–710; see also Energy-band control study; Si nanowire field-effect transistors (SiNW FETs)
calculated bandgap, 704
conduction-band structures of, 704
cross-sectional views, 703, 707
DOS, 702
electron effective masses, 702
fabrication, 701
side views, 707
SITE, see Spin injection and transport efficiency (SITE)
6T, see Six-transistor (6T)
Six-transistor (6T), 548
6T SRAM cell, see 6T static memory cell
6T static memory cell, 548, 549
probability, 553
Size effects, 810
Slater–Koster tight-binding models, 873
SLS, see Solution–liquid–solid (SLS)
SMD, see Surface mount discretes (SMD)
Sneak-path problem, 315
SNM, see Static noise margin (SNM)
SOC, see Spin–orbit coupling (SOC)
Sodium cholate (SC), 526
Sodium dodecyl sulfate (SDS), 514, 526
SoI technology, see Silicon-on-insulator technology (SoI technology)
Solid-phase crystallization (SPC), 728
Solution-based methods, 457
Solution–liquid–solid (SLS), 619
Solution-processed random CNT networks; see also Random network transistor
advantages, 530
challenges, 531
as electronic material, 525
nanotube network simulation, 529–530
random network transistor, 525–529
SEM image, 526
3D CNT network, 530
Solution-state methods, 615
Solvothermal method, 615
SOP, see Sum of products (SOP); System-on-panel (SOP)
voltage, 188
Space–charge-limited conduction (SCLC), 307
Spacecraft electronics
high-radiation environment, 355–356
latch-up, 356
reliability, 355
single-event upsets, 356
Spacer patterning technique, 728
SPC, see Solid-phase crystallization (SPC)
Special quasi-random structures (SQS), 873
SPICE, see Simulation program with integrated circuit emphasis (SPICE)
Spike timingdependent plasticity (STDP), 341; see also Simulation program with integrated circuit emphasis (SPICE); Synaptic learning mechanism
applications, 349
bias degradation of nc-Si silicon TFT devices, 349
circuit diagram for, 343
device models, 342
injection voltage reduction, 349
neural circuits, 342
power dissipation comparison, 349
sound localization, 350
spatio-temporal pattern recognition, 350
visual data processing, 351
Spin; see also All-spin logic (ASL)
accumulation, 820
based circuits, 811
current, 819
interactions, 836; see also Electric field-controlled spin interactions
torque, 812
torque effect, 811
torque-induced switching, 852
Spin–orbit coupling (SOC), 815
atomic, 819
in graphene, 819
Spin injection and transport efficiency (SITE), 812, 820
for ASL circuit, 820
spin quasi-chemical potential equation, 820
Spin-transfer torque (STT), 752, 811
clocking, 759
STT-MRAMs, 752
Spin-transfer torque random access memory (STT-RAM), 849, 860–862
AP to P switching, 850
critical current densities, 852
critical switching currents and thermal stabilities, 855–856
energy dissipation, 852
ferromagnetic materials investigated for, 859
ferromagnetic material switching speeds, 856–860
free ferromagnetic layer magnetization, 852
material issues for efficient, 849
micromagnetic solver and benchmarks, 853–854
potential energy density, 855
P to AP switching, 850
simulation result, 850
spin torque-induced switching, 852
Spin-wave bus (SWB), 811
SPM, see Scanning probe microscope (SPM)
SPPs, see Surface plasmon polaritons (SPPs)
Spray deposition of CNT, 457, 469; see also Carbon nanotubes (CNTs)
as-prepared film, 460
CNT film characterization, 459–463
CNT film with low tube density, 465
DC conductivity vs. film thickness, 462
optical characteristics, 465–467
process parameter effect, 463
sensitivity vs. NH3 concentration, 468
sensor resistance over time, 468
sheet resistance and film thickness, 462
sheet resistance vs. transmittance, 463, 464
sheet resistance vs. treatment duration, 466
solution preparation, 458
sonication time and CNT distribution, 463–464
transmittance vs. wavelength, 466
SQS, see Special quasi-random structures (SQS)
SRC, see Semiconductor Research Corporation (SRC)
SS, see Subthreshold swing (SS)
SS junction points, see Semiconducting–semiconducting junction points (SS junction points)
ST, see Strontium titanates (ST)
Stagnation points, 813
Stamp, 134
electron-beam lithography, 135, 136
molecular beam epitaxy, 135–136, 140
nanotransfer printing, 134–135
Standard calomel electrode (SCE), 644
Standard deviation (SD), 782
Static Energy Recovery Full adder(SERF), 68
Static noise margin (SNM), 68, 70, 548
fluctuation, 35
Static random access memory (SRAM), 28, 548, 751; see also CNTFET SRAM design
Statistical 3D device simulation, 28–30
STDP, see Spike timingdependent plasticity (STDP)
STEM, see Scanning transmission electron microscope (STEM)
Step and flash imprint lithography (SFIL), 186
STM, see Scanning tunneling microscope (STM)
Stress sensor modeling, 214; see also Electromechanical modeling
circuit model of single cell, 216
by current, 214
currents flow, 215
discretized electric potential and current density, 215
Strontium titanates (ST), 81
STT-RAM, see Spin-transfer torque random access memory (STT-RAM)
S type primitive, see Single-type primitive (S type primitive)
Subthreshold swing (SS), 727
Sum of products (SOP), 572
Surface acoustic wave (SAW), 111, 656
Surface-enhanced Raman scattering (SERS), 673, 680
Ag coverage and SERS intensity, 677–678
as analytical tool, 679
applications, 678
as biosensing tool, 678
detection limit comparison of, 676
E-beam-deposited Ag NPs, 675
for environmental detection, 678–679
experimental section, 674
GaN contribution to SERS effect, 678
TEM and Raman results, 675–677
template for, 674
Surface mount discretes (SMD), 89
Surface plasmon polaritons (SPPs), 493
Surface plasmon resonance frequency, 622
Surface-to-volume ratio, 447
Surfactants, 42
SW, see Single-wall (SW)
SWB, see Spin-wave bus (SWB)
SWeNT CNTs, 525; see also Carbon nanotube (CNT)
Switchblock, 571
Switching field distribution (SFD), 782
SWNTs terahertz response, 493
CNT s of different lengths, 498
current density vs. time, 498
electron density, 499
Fourier transform of current density, 499
kinetic energy, 500
Kohn–Sham potential, 495
Kohn–Sham Schrödinger-type equation, 494
model and methodology, 494–496
probability current density of wave function, 497, 500
Runge–Gross theorem, 495
time-dependent Schrödinger equation, 494
Synaptic clefts, 194; see also Interconnects
Synaptic learning mechanism, 343
action potential pairs, 343, 344–347
Synthetic diamond, 400; see also Graphene-on-diamond devices
growth and characterization, 401
material characterization of, 402
System-on-panel (SOP), 728
T
TA, see Test architecture (TA)
Tantalum capacitors, 86, 87, 88
TCAD models, see Technology computer aided design models (TCAD models)
TCNQ, see Tetracyanoquinodimethane (TCNQ)
TCO, see Transparent conductive oxide (TCO)
TCVD, see Thermal chemical vapor deposition technique (TCVD)
TDDFT, see Time-dependent density functional theory (TDDFT)
TDEAH, see Tetrakis(diethylamino) hafnium (TDEAH)
Technology computer aided design models (TCAD models), 867
TEGO, see Thermally expanded graphite oxide (TEGO)
TEM, see Transmission electron microscopy (TEM)
Temperature-independent charge transfer mechanism, see Fowler–Nordheim tunneling
TEOS, see Tetraethyl orthosilicate (TEOS)
Terahertz (THZ), 134
Test architecture (TA), 574, 575
Test group (TG), 571
Test pattern generators (TPGs), 571
Tetracyanoquinodimethane (TCNQ), 82
Tetraethyl orthosilicate (TEOS), 425, 728
Tetrakis(diethylamino) hafnium (TDEAH), 49
TFET, see Tunnel field-effect transistors (TFET)
TG, see Test group (TG)
TGA, see Thermogravimetric analysis (TGA)
TGs, see Transmission gates (TGs)
Thermal chemical vapor deposition technique (TCVD), 94
Thermal force, 357
Thermal interface materials (TIMs), 209
Thermal management
graphite nanoplatelets in, 210
thermal interface materials, 209
Thermal tape method (T-tape method), 384–387
Thermal–structural simulation, 358–359
Thermally actuated nanoelectromechanical memory, 355, 361–362
buckling mechanism of thermal memory, 356–358
critical buckling load, 357
finite-difference solver, 359
geometry effects on writing time and power consumption, 359–360
heat transfer coefficient, 358
high-energy particle collision, 360–361
nanomechanical memory, 356, 357
thermal force, 357
thermal–structural simulation, 358–359
total required buckling temperature, 357
Thermally expanded graphite oxide (TEGO), 210, 211
Thermogravimetric analysis (TGA), 510
Thin film transistor (TFT), 342, 505; see also Zinc oxide nanostructures
CNT random network as, 509
poly-Si TFT, 727
3D, see Three-dimension (3D)
Three-dimension (3D), 299
trench structure, 86
Three-input OR gate (OR-3 gate), 203
power and energy, 206
Threshold voltage spread characteristic magnitude, 31
static noise margin fluctuation, 35
threshold voltage fluctuation, 34, 35
Through-silicon vias (TSVs), 641
THZ, see Terahertz (THZ)
Time-dependent density functional theory (TDDFT), 494
Time-dependent Schrödinger equation, 494
Time-of-flight secondary ion mass spectrometry (ToFSIMS), 46
Time-resolved-PL spectra (TR-PL spectra), 610
TIMs, see Thermal interface materials (TIMs)
Tin oxide, 616
TLR, see Tube-level redundancy (TLR)
TMGa, see Trimethylgallium (TMGa)
ToFSIMS, see Time-of-flight secondary ion mass spectrometry (ToFSIMS)
Top-down fabrication, 42
Torques, 812
Total required buckling temperature, 357
TPGs, see Test pattern generators (TPGs)
TPL, see Tunneling phase logic (TPL)
Tractography methods, 194
Traditional QCA logic design, 260
Transconductance, 528
Transfer characteristic fluctuation estimation, 30
Transfer-printing process, 137
Transistors; see also Printed CNT transistors; Transparent thin film transistor (TTFT)
FET, 61
in NMOS, 332
sizing simulation, 337
Transmission electron microscopy (TEM), 657
film morphology analysis, 686
Transmission gates (TGs), 68
Transmission spectrum, 871
Transparent conductive oxide (TCO), 695
Transparent thin film transistor (TTFT), 694; see also nc-ZnO TFTs
current–voltage characteristics of nc-ZnO, 697
field-effect mobility and transconductance, 698
indium-free, 695
optical transmission rate, 696
transfer characteristics of, 697
Trench capacitors, 80
TriGate, 717
Triglyme (triethylenglykol-dimethylether), 515
Trimethylgallium (TMGa), 605
TR-PL spectra, see Time-resolved-PL spectra (TR-PL spectra)
Truth table, 229
TSVs, see Through-silicon vias (TSVs)
T-tape method, see Thermal tape method (T-tape method)
TTFT, see Transparent thin film transistor (TTFT)
T type primitive, 270
Tube-level redundancy (TLR), 542
Tungsten nanoislands, 183–184, 185
Tungsten oxide, 187
thickness estimation, 184
tunnel junctions, 187
Tunnel field-effect transistors (TFET), 867
tunneling current, 868
Tunneling barrier heights, 126–127
Tunneling magnetoresistance (TMR), 752, 849
Tunneling phase logic (TPL), 267
2D, see Two-dimension (2D)
2DEG, see Two-dimensional electron gas (2DEG)
Two-dimension (2D), 95
crossbar-based nanoarchitectures, 299
Two-dimensional electron gas (2DEG), 143
Two-input OR gate (OR-2 gate), 202
power and energy, 206
Two-terminal select devices, 300, 313
U
UHV, see Ultrahigh vacuum (UHV)
UIC, see University of Illinois at Chicago (UIC)
UK Department for Innovations, Universities and Skills (DIUS), 206
ULSI, see Ultra-large scale integration (ULSI)
Ultrahigh vacuum (UHV), 628
Ultra-large scale integration (ULSI), 44
bias–temperature–stress analysis, 45–46
Cu/low-k technologies, 44
secondary ion mass spectrometry, 46–47
Ultra-nanocrystalline diamond (UNCD), 399
UNCD, see Ultra-nanocrystalline diamond (UNCD)
Unipolar graphene field effect transistors, 51; see also Reduced graphene oxide FETs (RGO FETs)
University of Illinois at Chicago (UIC), 628
U.S. Department of Energy (DOE), 406
Utilization metric, 582
V
VACNTs, see Vertically aligned carbon nanotubes (VACNTs)
Valve metals, see Anodizable metals
Vapour-liquid-solid mechanism (VLS mechanism), 605, 615, 658
VCCS, see Voltage-controlled current sources (VCCS)
Verilog code of MQCA wire, 233
Vertical interconnect CNT, 423, 435
bottom-up integration, 433–435
integration approaches, 424
issues in, 423
I–V characterization, 429, 432–433
Raman data, 429
Raman spectra of CNT, 434
Raman spectroscopy, 427
resistivity vs. diameter, 432
surface treatment of TiN, 426–429
top-down and bottom-up integration process, 425
Vertical interconnects, 424; see also Interconnects; Vertically aligned carbon nanotubes (VACNTs)
Vertically aligned carbon nanotubes (VACNTs), 445; see also Carbon nanotubes (CNTs); Electrochemical double-layer capacitors (EDLCs)
based supercapacitor specific capacitance, 452
capacitive behavior of, 448–450
cyclic voltammograms of, 449
EC construction, 447
EDLC–battery hybrid systems, 454
electrolyte dielectric constant, 448
ESR of, 450
Faradaic behavior of, 450
Faradaic redox reactions, 451
floating catalyst method, 447
gas-phase oxidations, 451
lifetime and performance, 453–454
nonaqueous electrolytes, 448
physical properties of, 447
pristine, 451
Ragone plot, 453
wettability, 451
Very-large-scale integration (VLSI), 67
Vision computing circuits, 793
Visual cortex, 351
VLSI, see Very-large-scale integration (VLSI)
VLSI-compatible metallic carbon nanotube removal (VMR), 539
VLS mechanism, see Vapour-liquid-solid mechanism (VLS mechanism)
VMR, see VLSI-compatible metallic carbon nanotube removal (VMR)
Voltage transfer characteristics (VTCs), 71
Voltage transfer curve (VTC), 71
Voltage-controlled current sources (VCCS), 147
Voltammogram, 449
Volumetric densities of capacitor technologies, 80
Vosko–Wilk–Nusair (VWN), 411
VPD technique, see Physical vapor deposition technique (VPD technique)
VTC, see Voltage transfer curve (VTC)
VTCs, see Voltage transfer characteristics (VTCs)
VWN, see Vosko–Wilk–Nusair (VWN)
W
Wafer-to-wafer (W2W), 647
Waveform of MQCA wire, 233
WBK approximation, see Wentzel–Kramer–Brillouin approximation (WBK approximation)
WE, see Working electrode (WE)
Wentzel–Kramer–Brillouin approximation (WBK approximation), 123; see also Temperature-independent charge transfer mechanism
Wet etching, 85
Wire width, 257
WKF, see Work function fluctuation (WKF)
WLs, see Wordlines (WLs)
Wordlines (WLs), 300, 332, 548
Work function fluctuation (WKF), 30
Work function tuning, 47; see also Porphyrins
electrodes for, 47
KPFM imaging, 48
multiple metals integration, 48
porphyrin SAMs for, 48
Working electrode (WE), 644
Worst-scenario sensing margin, 304, 308
Write failure, 558
Wurtzite structure model, 666
W2W, see Wafer-to-wafer (W2W)
X
XC, see Exchange-correlation (XC)
XEDS, see X-ray energy-dispersive spectrometer (XEDS)
XOR and XNOR simulation, 153, 155
XPS, see X-ray photoelectron spectroscopy (XPS)
X-ray diffraction (XRD), 63
nanowires examination, 94, 657
patterns of deposited Si, 637
X-ray energy-dispersive spectrometer (XEDS), 633
X-ray photoelectron spectroscopy (XPS), 94, 451
XRD, see X-ray diffraction (XRD)
Y
Y function technique, 738
advantages, 746
modified, 739
Y parameter in planar MOSFET and NWFET, 739
Y parameter vs. NWFET VG curves, 740
Yield improvement technique analysis, 535, 544
background, 537
CNT s in CNFET BTR and ATR, 543
functional yield, 539
metallic CNTs, 538–539
Monte Carlo simulation, 540, 542, 544
semiconducting CNTs, 538
tube configurations CNFET, 540
YΦ method, 738
Z
ZB structure, see Zinc blende structure (ZB structure)
Zinc blende structure (ZB structure), 604
Zinc oxide nanostructures (ZnO nanostructures), 655–656; see also Zinc oxide nanowires
Zinc oxide nanowires, 655, 661–662
advantages of, 656
as-synthesized, 659
based detection, 657
characterization and surface studies, 658–661
design approach and potential applications, 657
FT-IR spectra, 660
oleic acid-modified, 660
PL spectrum, 661
Raman spectrum, 659
synthesis of, 658
XRD spectrum of, 658
ZnO nanowire-based p-nitrophenol sensor development, 661
on ZnO substrate, 658
ZnO-based biosensor designing, 657
Zn(II) TTPOH, see 5-(4-hydroxyphenyl)-10, 15, 20-tri (p-tolyl) zinc(II) porphyrin (Zn(II) TTPOH)
ZnO nanostructures, see Zinc oxide nanostructures (ZnO nanostructures)