- Cover image
- Title page
- Copyright
- Contributor contact details
- Woodhead Publishing Series in Electronic and Optical Materials
- 1. Overview of non-volatile memory technology: markets, technologies and trends
- Part I: Improvements in Flash technologies
- Part II: Phase change memory (PCM) and resistive random access memory (RRAM) technologies
- 5. Phase change memory (PCM) materials and devices
- 6. Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques
- Abstract:
- 6.1 Introduction
- 6.2 Strategies for improving the PCM performance
- 6.3 The use of nanowires
- 6.4 Fabrication of phase change nanowires (PC-NWs): top-down approaches
- 6.5 Fabrication of phase change nanowires (PC-NWs): bottom-up approaches
- 6.6 Fabrication of phase change nanowires (PC-NWs): other techniques
- 6.7 Characterization of PC-NWs
- 6.8 Conclusion
- 6.9 Sources of further information and advice
- 6.10 References
- 7. Nanowire phase change memory (PCM) technologies: properties and performance
- 8. Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures
- Abstract:
- 8.1 Introduction
- 8.2 Methodology for ab initio modeling of OxRRAMs
- 8.3 Physical concept for OxRRAM switching mechanisms based on density functional theory (DFT)-based ab initio modeling
- 8.4 OxRRAM optimization based on DFT-based ab initio modeling
- 8.5 Conclusion and future trends
- 8.6 References
- 9. Metal oxide resistive random access memory (RRAM) technology
- 10. Conductive bridge random access memory (CBRAM) technology
- Abstract:
- 10.1 Introduction
- 10.2 Scaling challenges in dynamic random access memory (DRAM)
- 10.3 Scaling challenges in Flash memory
- 10.4 Marketplace challenges for emerging memory technologies
- 10.5 Operation of a CBRAM cell from an atomic wire point of view
- 10.6 The ON state of a CBRAM cell and the programming operation
- 10.7 The OFF state of a CBRAM cell and the erase operation
- 10.8 Conclusion and future trends
- 10.9 References
- 11. Memristors for non-volatile memory and other applications
- Part III: Alternative emerging technologies
- 12. Molecular, polymer and hybrid organic memory devices (OMDs)
- 13. Nano-electromechanical random access memory (RAM) devices
- 14. Ferroelectric random access memory (FRAM) devices
- Abstract:
- 14.1 Introduction
- 14.2 Basic properties of ferroelectric capacitors
- 14.3 Ferroelectric materials used for FRAM devices
- 14.4 FRAM fabrication processes
- 14.5 Ferroelectric memory cell structure of capacitor-type FRAM devices
- 14.6 Assessing the reliability of FRAM devices
- 14.7 Applications of FRAM devices
- 14.8 Conclusion and future trends
- 14.9 References
- 15. Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology
- Index
Advances in Non-volatile Memory and Storage Technology
Edited by
Yoshio Nishi
Woodhead Publishing Series in Electronic and Optical Materials: Number 64
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