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Table of Contents

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Woodhead Publishing Series in Electronic and Optical Materials

1. Overview of non-volatile memory technology: markets, technologies and trends

1.1 Introduction

1.2 The non-volatile memory (NVM) market and applications

1.3 Developments in charge storage memory technology

1.4 Alternative memory storage concepts

1.5 Beyond evolutionary architecture scaling

1.6 Future trends

Part I: Improvements in Flash technologies

2. Developments in 3D-NAND Flash technology

2.1 Introduction

2.2 2D-NAND Flash memory: limitations in scaling

2.3 3D-NAND Flash memory with vertical channels

2.4 3D-NAND Flash memory with horizontal channels

2.5 Performance and electrical characteristics of different 3D-NAND Flash memory designs

3. Multi-bit NAND Flash memories for ultra high density storage devices

3.1 Introduction

3.2 Array architectures

3.3 Read techniques

3.4 Program and erase algorithms

3.5 Reliability issues in NAND Flash memory technologies

3.6 Monolithic 3D integration

3.7 Conclusion and future trends

4. Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered charge-trapping layers and split-gate memory architectures

4.1 Introduction

4.2 Silicon nanocrystals

4.3 Metal nanocrystals

4.4 Charge trap memories

4.5 Split-gate charge trap memories

Part II: Phase change memory (PCM) and resistive random access memory (RRAM) technologies

5. Phase change memory (PCM) materials and devices

5.1 Introduction

5.2 Phase change materials: structure and crystallization kinetics

5.3 Properties of phase change materials

5.4 Phase change memory (PCM): principles and modeling

5.5 PCM device design and engineering

5.6 Conclusion and future trends

6. Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques

6.1 Introduction

6.2 Strategies for improving the PCM performance

6.3 The use of nanowires

6.4 Fabrication of phase change nanowires (PC-NWs): top-down approaches

6.5 Fabrication of phase change nanowires (PC-NWs): bottom-up approaches

6.6 Fabrication of phase change nanowires (PC-NWs): other techniques

6.7 Characterization of PC-NWs

6.9 Sources of further information and advice

6.10 References

7. Nanowire phase change memory (PCM) technologies: properties and performance

7.1 Introduction

7.2 Melting temperature and crystallization kinetics

7.3 Phase transition mechanisms

7.4 Thermal properties

7.5 Electrical properties

7.6 Properties of core-shell structures

7.8 Acknowledgement

7.9 Sources of further information and advice

7.10 References

8. Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures

8.1 Introduction

8.2 Methodology for ab initio modeling of O_xRRAMs

8.3 Physical concept for O_xRRAM switching mechanisms based on density functional theory (DFT)-based ab initio modeling

8.4 O_xRRAM optimization based on DFT-based ab initio modeling

8.5 Conclusion and future trends

9. Metal oxide resistive random access memory (RRAM) technology

9.1 Introduction

9.2 Operational characteristics of HfO₂-based RRAM

9.3 Modeling forming and switching processes

9.4 Materials development: engineering vacancy profiles for RRAM

9.5 Read current instability (random telegraph noise)

9.7 Acknowledgements

10. Conductive bridge random access memory (CBRAM) technology

10.1 Introduction

10.2 Scaling challenges in dynamic random access memory (DRAM)

10.3 Scaling challenges in Flash memory

10.4 Marketplace challenges for emerging memory technologies

10.5 Operation of a CBRAM cell from an atomic wire point of view

10.6 The ON state of a CBRAM cell and the programming operation

10.7 The OFF state of a CBRAM cell and the erase operation

10.8 Conclusion and future trends

10.9 References

11. Memristors for non-volatile memory and other applications

11.1 Introduction

11.2 The realization of memristor devices

11.3 Design of memristor-based non-volatile memory

11.4 Other promising memristor applications

11.5 Acknowledgement

11.6 References

11.7 Appendix: Memristor characteristic properties

Part III: Alternative emerging technologies

12. Molecular, polymer and hybrid organic memory devices (OMDs)

12.1 Introduction

12.2 Types of organic memory devices (OMDs)

12.3 Conclusion and future trends

12.4 References

13. Nano-electromechanical random access memory (RAM) devices

13.1 Introduction

13.2 Device structure and cell operation

13.3 Fabrication process for a prototype cell

13.4 Assessing cell reliability

13.5 Device scaling

13.6 Conclusion

13.7 References

14. Ferroelectric random access memory (FRAM) devices

14.1 Introduction

14.2 Basic properties of ferroelectric capacitors

14.3 Ferroelectric materials used for FRAM devices

14.4 FRAM fabrication processes

14.5 Ferroelectric memory cell structure of capacitor-type FRAM devices

14.6 Assessing the reliability of FRAM devices

14.7 Applications of FRAM devices

14.8 Conclusion and future trends

14.9 References

15. Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology

15.1 Introduction

15.2 Materials and devices

15.3 Improving memory storage

15.4 Improving logic-in-memory architecture

15.5 Future trends

15.6 Conclusion

15.7 Acknowledgement

15.8 Sources of further information and advice

15.9 References

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